A-Star supplies high quality Ti:Sapphire(Ti3+:Al2O3) by the advanced growth method of Temperature Gradient Technique (TGT), Ti:Sapphire is an excellent substitute for dye lasers in many applications.
Ti:Sapphire
A-Star supplies high quality Ti:Sapphire(Ti3+:Al2O3) by the advanced growth method of Temperature Gradient Technique (TGT), Ti:Sapphire is an excellent substitute for dye lasers in many applications. By harmonics using NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV laser sources with ultrafast pulses below 10fs.
Capabilities:
| Attribute | Specification |
| Ti2O3 Concentration: | 0.06~0.5wt% |
| Figure of Merit | 100~300mm |
| Diameter | 2~50mm |
| Path Length | 2~130mm |
| End Configuration | flat/flat or brewster/brewster ends or specified |
Typical Specification and Tolerance:
| Orientation | Optical axis C normal to rod axis |
| α490 | 1.0-7.5cm-1 |
| flatness | <l/10 at 632.8nm |
| Parallelism | < 10 arc seconds |
| Surface quality | better than 60/40 Scratch/Dig per MIL-O-1380A |
| Wavefront Distortion | <l/4 per inch at 632.8nm |
| Coating | Can custom-made coatings on Ti:saphire upon requirement, please specify when ordering. |
Titanium doped sapphire is the most widely used crystal for wavelength tunable lasers. It is also an excellent medium capable of generating ultrashort pulse, high gain and high power lasing. ATOM have successfully produced large-sized (F120´80mm) Ti: sapphire free of light scatter and with dislocation density less than 102cm-2 by using the growth method of Temperature Gradient Technique (TGT). TGT was invented by the scientists in SIOM, which is characterized by the capabilities of growing (0001) oriented sapphire with high doping level (a490=7.5cm-1), high gain, and high laser damage threshold.
Pulsed, quasi-cw, cw, ps and fs lasing with high efficiency have been realized using TGT grown Ti:sapphire. Moreover, TGT grown Ti:sapphire can also meet current applications such as in large aperture amplifiers (diameter up to 50mm) for high power generation and laser fusion etc.
| Chemical Formula | Ti3+:Al2O3 |
| Crystal Structure | Hexagonal |
| Lattice Constants | a=4.758, c=12.991 |
| Density | 3.98 g/cm3 |
| Melting Point | 2040℃ |
| Mohs Hardness | 9 |
| Thermal Expansion | 8.4 x 10-6/℃ |
| Thermal Conductivity | 52 W/m/K |
| Specific Heat | 0.42 J/g/K |
| Laser Action | 4-Level Vibronic |
| Fluorescence Lifetime | 3.2μs at 300K |
| Tuning Range | 660nm ~ 1050nm |
| Absorption Range | 400nm ~ 600nm |
| Emission Peak | 795 nm |
| Absorption Peak | 488 nm |
| Refractive Index | 1.76 at 800nm |
| Peak Cross Section | 3.4 x 10-19cm2 |
Titanium doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for tunable and ultrashort pulsed lasers with high gain and high power outputs. Using the growing method of Temperature Gradient Technique, we can supply large size (dia30 x 30 mm) crystal in high quality free of scattering, high gain and damage threshold.